Highlights

This highlight provides an example of the precise interface quantum materials that can be created by MBE and characterized by high-resolution STEM and elemental analysis in PARADIM facilities.

Today, sub-angstrom resolution scanning trans-mission electron microscopy (STEM) imaging is routinely achieved. In addition to resolving individual atomic columns in crystals, STEM performed at room temperature can be used to determine their positions with picometer precision which allows us to directly map local properties.

Building on their growing expertise with valleytronic materials, PARADIM researchers, Jiwoong Park (University of Chicago) and David Muller (Cornell University) have discovered a way to assemble multi-layer stacks of monolayers of transition metal dichalcogenide (TMD) materials (MoS2, MoSe2, and WS2) with centimeter-scale dimensions in a user-defined sequence. The assembly is achieved without the use of etchants or solvents by exploiting the stronger binding that occurs between TMD layers than between the TMD layer and the underlying substrate.

PARADIM theorists have recognized that lightly hole-doped transition metal dichalcogenides (TMDs) are natural candidates for the long sought odd-parity topological superconductor vital for ground-state topological quantum computing.

Building on their growing expertise with interface materials, PARADIM researchers discovered a new mechanism for reorienting magnetization that is 10 times more energy efficient than prior techniques. An electrical current is passed through a low symmetry valleytronic material containing heavy atoms that is positioned under a magnetic layer.

A novel strategy for the synthesis and purification of discrete, highly functionalized oligomer libraries in a 96-well, high-throughput format was developed.

To assess the potential of transition metal dichalcogenides (MDs) for future circuits, it is important to study the variation in key device parameters across a large number of devices. Here we benchmark device-to-device variation in field- effect transistors (FETs) based on wafer-scale monolayer MoS, and WS.

High entropy compounds are an emerging class of functional materials in which short range order enables superior combinations of properties not present in traditional pure or doped structures.

We present modulator designs based on graphene-metal hybrid plasmonic metasurfaces with highly enhanced light- graphene interaction in the nanoscale hot spots at pump and probe (signal) wavelengths. Based on this design concept, we have demonstrated high-speed all optical modulators at near and mid-infrared wavelengths (1.56 um and above Gum) with significantly reduced pump fluence (1-2 orders of magnitude) and enhanced optical modulation.

An invited perspective highlighting research in the high pressure domain at PARADIM was recently published in the Journal of Solid State Chemistry as part of a 50th anniversary special edition.