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Publications

Y. Kuang, Z. Yao, C. Salgado, E. M. Lundqvist, N. Morsi, N. Celt, J. M. Urueña, C. M. Phillips, M. J. Zeitz, J. W. Smyth, D. A. Fishman, and H. A. M. Ardoña
Optoelectronic biohybrid platform enables light-controlled cardiac structural and functional feedback
Cell Biomaterials 100416 (2026)
M. Kubovsky, Y. A. Birkhölzer, L. B. Mitrovic, H. Paik, G. R. Rossman, and D. G. Schlom
Preparation and evaluation of alexandrite, forsterite, and topaz substrates for the epitaxial growth of rutile oxides
APL Materials 14 (2026)
T. Xie, Q. Wang, H. Zhang, K. Acharya, J. Chen, C. Liu, Z. Song, S. A. Deitemyer, H. S. Arachchige, Q. Tan, A. F. May, S. H. Lee, M. A. Susner, Z. Mao, M. A. McGuire, et al.
Tailorable multiferroic tunnel junctions from all-van der Waals multilayer stacking
Nature Nanotechnology (2026)
S. Karapetyan, S. E. Zeltmann, G. Wilk, T. Chen, V. D. -. Hou, and D. A. Muller
3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychography
Nature Communications (2026)
S. Mali, Y. Zhao, Y. Wang, S. Sarker, Y. Chen, Z. Li, J. Zhu, Y. Liu, V. Gopalan, B. Yan, and Z. Mao
Probing hidden symmetry via nonlinear transport in an altermagnet candidate Ca3Ru2O7
Nature Communications 17 (2026)
V. M. Ravel, S. R. Evans, S. K. Holmes, J. L. Doherty, M. S. Rahman, T. Roy, and A. D. Franklin
Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure
ACS Nano 20 7127-7136 (2026)
P. T. Morris, K. R. Albanese, N. Chapple, H. K. Beech, J. Read de Alaniz, and C. M. Bates
Cross-Link Location Influences Performance in Acrylic Pressure-Sensitive Adhesives
Macromolecules (2026)
P. E. Jankoski, J. Shrestha, W. S. Swetman, H. Livingston, J. Sorrell, and T. D. Clemons
Cell-Laden Supramolecular and Covalent Polymer Hydrogels for High-Shear Delivery: A Design of Experiments Approach
Chemistry of Materials (2026)
D. Sen, H. Ravichandran, S. Imam, S. Ghosh, K. Mukhopadhyay, M. Y. Bashir, T. S. Ie, V. Mazanek, J. Luxa, C. Chen, J. M. Redwing, Z. Sofer, S. Sahay, M. G. Kanatzidis, and S. Das
van der Waals dielectrics for threshold engineering in two-dimensional field effect transistors
Nature Communications 17 (2026)
Y. Tarn, Y. Liu, F. Theuss, J. Li, B. Y. Wang, L. Bhatt, J. Wang, J. Song, V. Thampy, B. H. Goodge, D. A. Muller, Z. Shen, Y. Yu, and H. Y. Hwang
Reducing the Strain Required for Ambient‐Pressure Superconductivity in Ruddlesden‐Popper Bilayer Nickelates
Advanced Materials (2026)
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