Highlights
Possible evidence of Weyl fermion enhanced thermal conductivity under magnetic fields in the antiferromagnetic topological insulator Mn(Bi1−xSbx)2Te4
MnBi2Te4 has garnered substantial scientific interest due to its status as the first intrinsic antiferromagnetic (AFM) topological insulator and its ability to host quantum anomalous Hall insulator and axion insulator states within 2D thin layers.
Scalable CMOS back-end-of-line-compatible AlScN/2D channel ferroelectric field-effect transistors
3D monolithic integration of memory devices with logic transistors is essential for augmenting computational power concurrent with enhanced energy efficiency in big data applications such as artificial intelligence
Evidence of magnetic fluctuation induced Weyl semimetal state in the antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4
The recent study of intrinsic antiferromagnetic topological insulator Mn(Bi,Sb)2Te4 has attracted a great deal of interest, since it provides assess to a variety of topological quantum states such as quantum anomalous Hall insulator and axion insulator. In this work, we report systematic c-axis transport studies under high magnetic fields (up to 35T) on Mn(Bi1-xSbx)2Te4.
Towards a mechanistic understanding of the formation of 2D-GaNx via MOCVD
Epitaxial graphene (EG) plays a crucial role in the confinement and stabilization of 2D group III metals and their nitrides at the EG/SiC interface, but the mechanism of intercalation and compound formation is not well understood.
Wafer-scale transition metal dichalcogenides enable large area 2D electronics and optoelectronics
Ultra-thin 2D semiconductors based on monolayer transition metal dichalcogenides (TMDs) are seen as potential candidates for future generation electronic and optoelectronic devices for energy efficient computing and sensing for applications such as Internet-of-Things and artificial intelligence.
Understanding signatures of emergent magnetism in topological insulator/ferrite bilayers
Magnetic proximity effects have been studied in a variety of magnetic heterostructures for many applications including spintronics, valleytronics, and topological phenomena.
Wafer Scalable Single-Layer Amorphous MoO3
This study demonstrates a facile route to obtain wafer-scale monolayer amorphous MoO, using monolayer 2D MoS, grown by metalorganic chemical vapor deposition (MOCVD) as a starting material, following by UV-ozone oxidate at substrate temperatures as low as 120-C. The process yields smooth, continuous, uniform and stable monolayer oxide with wafer-scale homogeneity.
Mapping the phase diagram of the quantum anomalous Hall and topological Hall effects
The interplay between topology in momentum space and topology in real space creates a vibrant playground for studying emergent phenomena in condensed matter physics.
Studying the influence of a capping layer on interfacial superconductivity in FeSe/SrTiO3 heterostructures
We used the 2DCC multimodule molecular beam epitaxy (MBE) and surface characterization facility to study the influence of various capping layers on the Tc of ultrathin films of FeSe grown on SrTiO3. The multimodule facility’s in vacuo four-probe electrical resistance measurement capability provided critical information about the Tc of MBE-grown FeSe films in their pristine state, while ex situ magneto-transport measurements elucidated the key role of distinct charge transfer from different capping layers (compound FeTe, non-metallic Te, and metallic Zr). Our results show that FeTe provides an optimal cap that barely influences the inherent Tc found in pristine FeSe/SrTiO3, while the transfer of holes from a non-metallic Te cap completely suppresses superconductivity and leads to insulating behavior.
Benchmarking monolayer MoS, and W, field-effect transistors
To assess the potential of transition metal dichalcogenides (MDs) for future circuits, it is important to study the variation in key device parameters across a large number of devices. Here we benchmark device-to-device variation in field- effect transistors (FETs) based on wafer-scale monolayer MoS, and WS.
Ultrafast low-pump fluence all-optical modulation based on graphene-metal hybrid metasurfaces
We present modulator designs based on graphene-metal hybrid plasmonic metasurfaces with highly enhanced light- graphene interaction in the nanoscale hot spots at pump and probe (signal) wavelengths. Based on this design concept, we have demonstrated high-speed all optical modulators at near and mid-infrared wavelengths (1.56 um and above Gum) with significantly reduced pump fluence (1-2 orders of magnitude) and enhanced optical modulation.
Elastic stiffening induces one-dimensional phonons in thin DMR-2039351 TaSe; nanowires
While previously, experimental studies of one-dimensional transform have been largely limited to earlier studies of thermal transport through single-walled carbon or boron nitride nanotubes, recent attempts have been made to probe thermal transport in quasi-1D van der Waals crystal nanowires, revealing interesting observations in the process.
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