The 2DCC Hybrid Chalcogenide Molecular Beam Epitaxial (MBE) system is an MBE system dedicated to the growth of chalcogenide thin films. The hybrid MBE approach in particular enables the synthesis of chalcogenide materials containing refractory metallic components through the addition of a gas injector system allowing to supply these elements in a molecular form, giving access to a different growth kinetics, potentially favorable for refractory transition metal elements with low vapor pressures. To guarantee the highest degree of control down to a single layer and excellent reproducibility the chalcogenide MBE reactor is equipped with a series of state of the art in-situ monitoring capabilities, such as reflection high energy electron diffraction, ion gauge beam flux monitor, residual gas analyzer, heated quartz crystal monitor, and a spectroscopic ellipsometer. The hybrid chalcogenide MBE can handle wafers up to 3 inches. The chalcogenide MBE reactor is connected via a UHV transfer line with a oxide MBE reactor and a sputter deposition system. The in-vacuo transfer between the components of the cluster enables the integration of chemically dissimilar materials, such as growth of chalcogenide films on oxide thin films, as well as capping chalcogenide thin films using sputter deposition tool or integrate top electrodes via shadow mask onto the film without breaking vacuum to minimize potential contamination of film surfaces. In-vacuo sample exchange routine between the hybrid chalcogenide MBE and the 2DCC MIP thin film characterization cluster located in Davey Laboratory at the Pennsylvania State University with surface sensitive characterization techniques, such as angle resolved photoelectron emission spectroscopy, scanning tunneling microscopy and transport measurements.