2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP)

The 2DCC-MIP combines a vibrant in-house research effort focused on transformative advances in the synthesis and characterization of 2D chalcogenide layered materials with a robust external user program that provides access to expertise and state-of-the-art facilities. The 2DCC-MIP platform enables cutting edge research and discovery, across in-house research and the user program, on the synthesis and characterization of 2D chalcogenide materials by a national user community guided by four science drivers: Physics of 2D Systems, Epitaxy of 2D Chalcogenides, Next-generation 2D Electronics, and Advanced Characterization and Modeling.

Publications

  • J. R. Chin, I. A. Moses, M. Wang, M. B. Frye, M. Yu, N. Nayir, M. Hilse, A. C. T. van Duin, S. Law, W. Reinhart, and L. M. Garten
    Analyzing the impact of Se concentration during the molecular beam epitaxy deposition of 2D SnSe with atomistic-scale simulations and explainable machine learning
    Materials Today Advances
    28
    100640
    (2025)
    10.1016/j.mtadv.2025.100640
  • J. Choi, B. A. Schmidt, M. Boleychuk, K. Bedi, E. Sandoval-Arteaga, K. N. Almonte, Q. M. Boussard, J. K. Krebs, M. Kowalik, A. van Duin, and K. E. Plass
    Copper Selenides via Anion Exchange versus Direct Growth – The Role of Diorganyl Diselenides
    Inorganic Chemistry
    (2025)
    10.1021/acs.inorgchem.5c04328
  • D. Kong, R. Peckham, K. Burns, Z. Mao, S. H. Lee, J. A. Hachtel, Z. Gai, I. Harrison, and P. Reinke
    Tip-Induced Etching and Vacancy Island Evolution on 2H-TaS 2 Revealed by STM
    The Journal of Physical Chemistry C
    129
    19166-19176
    (2025)
    10.1021/acs.jpcc.5c05198
  • S. Mathela, Z. Yu, Z. D. Ward, N. Dihingia, A. Sredenschek, D. Sanchez, K. T. Munson, E. Houser, E. Dimitrov, A. Jain, D. Reifsnyder Hickey, H. Terrones, M. Terrones, and J. B. Asbury
    Understanding and Controlling Vanadium Doping and Sulfur Vacancy Behavior in Two-Dimensional Semiconductors: Toward Predictive Design
    ACS Nano
    (2025)
    10.1021/acsnano.5c10856
  • X. Zhang, N. Trainor, T. V. Mc Knight, A. R. Graves, Z. Wu, L. Xu, X. Zheng, T. Zhang, J. Zhu, T. Palacios, J. Kong, B. Groven, B. Tian, C. Duan, J. M. Redwing, et al.
    Metal–organic chemical vapour deposition for 2D chalcogenides
    Nature Reviews Methods Primers
    5
    (2025)
    10.1038/s43586-025-00429-4
  • M. Wang, S. Md Pratik, N. Nayir, M. S. Tameh, V. Coropceanu, J. Bredas, J. Pyun, A. C. T. van Duin, and S. Saiev
    Atomic‐Scale Mechanistic Insights into the Ring‐Opening Polymerization of Elemental Sulfur
    Angewandte Chemie International Edition
    64
    (2025)
    10.1002/anie.202511640
  • I. A. Moses, C. Chen, J. M. Redwing, and W. F. Reinhart
    Cross‐Modal Characterization of Thin‐Film MoS2 Using Generative Models
    Advanced Intelligent Systems
    (2025)
    10.1002/aisy.202500613
  • T. H. Choudhury, N. Trainor, C. Chen, M. Chubarov, S. Bachu, K. Momeni, J. S. Lundh, D. R. Hickey, T. Zhang, A. Sebastian, H. Zhu, B. Song, Y. Chen, ..., D. Jariwala, J. M. Redwing, et al.
    Comparison of the MOCVD growth and properties of wafer-scale transition metal dichalcogenide epitaxial monolayers
    2D Materials
    12
    045009
    (2025)
    10.1088/2053-1583/adf567
  • G. M. Ferguson, R. Xiao, A. R. Richardella, A. Kaczmarek, N. Samarth, and K. C. Nowack
    Local potential distribution generates edge currents in a magnetic topological insulator
    Physical Review B
    112
    (2025)
    10.1103/9t67-dl2v
  • Z. Liu, Q. Mao, V. Kamboj, R. Kothari, P. Miller, K. Reidy, A. C. T. van Duin, R. Jaramillo, and F. M. Ross
    Epitaxial Formation of Ultrathin HfO2 on Multilayer Graphene by Sequential Oxidation
    ACS Nano
    19
    25028-25041
    (2025)
    10.1021/acsnano.5c04437
  • S. Ghosh, M. U. K. Sadaf, A. R. Graves, Y. Zheng, A. Pannone, S. Ray, C. Cheng, J. Guevara, J. M. Redwing, and S. Das
    High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping
    Nature Communications
    16
    (2025)
    10.1038/s41467-025-59684-4
  • K. Shimonosono, Y. Maekawa, N. Chaya, K. Okamoto, W. Yamaoka, Y. Kawashima, Y. Inoue, P. Hsieh, A. Saha, A. Suceava, S. Hazra, H. Yokota, V. Gopalan, and H. Funakubo
    Kinetic Understanding of Field-Induced Phase Transition from Tetragonal to Ferroelectric Orthorhombic Phase in Ferroelectric CeO2–HfO2–ZrO2 Films
    ACS Applied Electronic Materials
    (2025)
    10.1021/acsaelm.5c00262
  • S. Ghosh, Y. Zheng, M. Rafiq, H. Ravichandran, Y. Sun, C. Chen, M. Goswami, N. U. Sakib, M. U. K. Sadaf, A. Pannone, S. Ray, J. M. Redwing, Y. Yang, S. Sahay, and S. Das
    A complementary two-dimensional material-based one instruction set computer
    Nature
    642
    327-335
    (2025)
    10.1038/s41586-025-08963-7
  • W. J. Yánez-Parreño, A. Vera, S. Santhosh, C. Dong, J. C. Kotsakidis, Y. Ou, S. Islam, A. L. Friedman, M. Wetherington, J. Robinson, and N. Samarth
    Charge-to-spin conversion in atomically thin bismuth
    Physical Review Applied
    23
    (2025)
    10.1103/fwrg-3dr2
  • M. S. Islam, N. H. Manimaran, A. Abrand, J. W. Morrell, A. R. Kirmani, K. Xu, and P. K. Mohseni
    Electrolyte-gated junctionless III-V Nanowire transistors: a TCAD-based evaluation
    Journal of Computational Electronics
    24
    (2025)
    10.1007/s10825-025-02338-x
  • D. S. H. Liu, S. Calderon, L. Jacques, J. Yao, A. C. Suceava, B. Fazlioglu-Yalcin, M. Li, J. Young, W. Auker, S. Law, R. Engel-Herbert, V. Gopalan, Y. Liu, S. Trolier-McKinstry, J. M. Redwing, et al.
    Evidence for In-Plane Electrical Polarization in 3R-β’-In2Se3 Thin Films Grown by Molecular Beam Epitaxy
    ACS Applied Materials & Interfaces
    17
    35661-35672
    (2025)
    10.1021/acsami.5c01185
  • H. Padma, F. Glerean, S. F. R. TenHuisen, Z. Shen, H. Wang, L. Xu, J. D. Elliott, C. C. Homes, E. Skoropata, H. Ueda, B. Liu, E. Paris, A. Romaguera, B. Lee, ..., Z. Mao, et al.
    Symmetry-protected electronic metastability in an optically driven cuprate ladder
    Nature Materials
    24
    1584-1591
    (2025)
    10.1038/s41563-025-02254-2
  • M. Yu, I. A. Moses, W. F. Reinhart, and S. Law
    Multimodal Machine Learning Analysis of GaSe Molecular Beam Epitaxy Growth Conditions
    ACS Applied Materials & Interfaces
    17
    34707-34716
    (2025)
    10.1021/acsami.5c02891
  • M. U. K. Sadaf, Z. Chen, S. Subbulakshmi Radhakrishnan, Y. Sun, L. Ding, A. R. Graves, Y. Yang, J. M. Redwing, and S. Das
    Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors
    Nature Communications
    16
    (2025)
    10.1038/s41467-025-59993-8
  • Y. Ou, W. Yánez-Parreño, Y. Huang, S. Ghosh, C. Şahin, M. Stanley, S. Santhosh, S. Islam, A. Richardella, K. A. Mkhoyan, M. E. Flatté, and N. Samarth
    Spin Hall Conductivity in Bi1–xSbx as an Experimental Test of Bulk-Boundary Correspondence
    Nano Letters
    25
    8775-8781
    (2025)
    10.1021/acs.nanolett.5c01806
  • A. Rasyotra, M. Das, D. Sen, Z. Zhang, A. Pannone, C. Chen, J. M. Redwing, Y. Yang, K. Jasuja, and S. Das
    Nanosheets Derived from Titanium Diboride as Gate Insulators for Atomically Thin Transistors
    ACS Nano
    19
    19646-19658
    (2025)
    10.1021/acsnano.4c18634
  • Y. Zhang, Y. K. Shin, and A. C. T. van Duin
    ReaxFF studies of surface fluorination of alumina and etching of alumina/aluminum metal heterostructures under gas-phase hydrogen fluoride exposure
    The Journal of Chemical Physics
    162
    (2025)
    10.1063/5.0260909
  • Y. Li, C. Shi, F. Zhang, X. Liu, Y. Xue, V. Ha, Q. Gao, C. Dong, Y. Lin, L. N. Holtzman, N. Morales-Durán, H. Kim, J. Hone, J. A. Robinson, X. Li, et al.
    Robust supermoiré pattern in large-angle single-twist bilayers
    Nature Physics
    21
    1085-1092
    (2025)
    10.1038/s41567-025-02914-9
  • L. Xu, Z. Wu, Y. Han, M. Wang, J. Li, C. Chen, L. Wang, Y. Yuan, L. Shi, J. M. Redwing, and X. Zhang
    Pseudosymmetric Epitaxy for Scalable Growth of Uniform Two-Dimensional Ferroelectric α-In2Se3 Monolayer
    Nano Letters
    (2025)
    10.1021/acs.nanolett.5c01935
  • Q. Zhang, Y. Ou, M. Hilse, D. S. H. Liu, and S. Law
    Prospects for THz optoelectronic devices using chalcogenide topological materials and recent progress on their synthesis by molecular beam epitaxy [Invited]
    Optical Materials Express
    15
    1135
    (2025)
    10.1364/ome.562065
  • N. J. Hourigan, P. Seiler, M. Wetherington, C. Dong, J. A. Robinson, G. Benedek, and A. Tamtögl
    How does intercalation affect the structure and dynamics of bilayer graphene?
    Carbon
    238
    120156
    (2025)
    10.1016/j.carbon.2025.120156
  • F. Zhang, N. Morales-Durán, Y. Li, W. Yao, J. Su, Y. Lin, C. Dong, X. Liu, F. R. Chen, H. Kim, K. Watanabe, T. Taniguchi, X. Li, J. A. Robinson, A. H. Macdonald, et al.
    Experimental signature of layer skyrmions and implications for band topology in twisted WSe2 bilayers
    Nature Physics
    21
    1217-1223
    (2025)
    10.1038/s41567-025-02876-y
  • T. Wang, J. M. Marmolejo-Tejada, M. A. Mosquera, V. H. Crespi, and A. C. T. van Duin
    New ReaxFF Reactive Force Field Optimized for Vibrational and Thermal Properties of Molybdenum Disulfide
    The Journal of Physical Chemistry Letters
    16
    4529-4535
    (2025)
    10.1021/acs.jpclett.5c00464
  • S. Majumder, N. Shinde, J. Cavin, C. Chen, A. B. Dey, K. V. L. V. Narayanachari, J. Zhang, D. Garcia-Wetten, O. Dieguez, S. Hettler, A. Cohen, D. T. Keane, R. Arenal, J. M. Rondinelli, A. Ismach, et al.
    Chemistry and Interfacial Structure Promoting Quasi-van der Waals Epitaxial Growth of WS2 Nanosheets on Sapphire for Prospective Application in Field-Effect Transistors
    ACS Applied Nano Materials
    8
    9256-9267
    (2025)
    10.1021/acsanm.5c00681
  • R. Trice, M. Yu, A. Richardella, M. Hilse, and S. Law
    Substrate preparation methods for improved synthesis of Bi2Se3 films grown on sapphire by molecular beam epitaxy
    Journal of Vacuum Science & Technology A
    43
    (2025)
    10.1116/6.0004429
  • O. Peterson, H. Saeed, J. Niedel, K. Wang, Q. Zhang, S. Law, M. Hilse, and F. Peiris
    Layer-dependent optical properties of PtSe2 determined from a single film
    Journal of Vacuum Science & Technology A
    43
    (2025)
    10.1116/6.0004406
  • Q. Zhang, M. K. Caucci, M. Hilse, A. Diaz Gomez, S. Sinnott, and S. Law
    Effects of Sb and Bi Doping in SnTe Layers Grown by Molecular Beam Epitaxy
    ACS Applied Electronic Materials
    7
    3543-3551
    (2025)
    10.1021/acsaelm.5c00299
  • Q. Zhang, K. Wang, W. Auker, M. Hilse, and S. Law
    Molecular Beam Epitaxy of Mn2In2Se5 van der Waals Layers Using Mn Intercalation
    Crystal Growth & Design
    25
    2476-2483
    (2025)
    10.1021/acs.cgd.4c01703
  • S. H. Lee, Y. Zhao, N. Gluscevich, H. Yi, Z. Morgan, H. Cao, J. Koo, Y. Wang, J. He, V. Gopalan, Y. Wang, W. Xie, C. Chang, Q. Zhang, Z. Mao, et al.
    Discovery of an Intrinsic Antiferromagnetic Semiconductor EuSc2Te4 With Magnetism‐Driven Nonlinear Transport
    Advanced Functional Materials
    35
    (2025)
    10.1002/adfm.202424231
  • C. Ordonez, C. Dong, A. Jain, L. Lu, J. A. Robinson, and K. L. Knappenberger
    High Harmonic Generation from 2D Polar Metal Heterostructures
    The Journal of Physical Chemistry C
    129
    5133-5139
    (2025)
    10.1021/acs.jpcc.4c08773
  • S. Song, K. Kim, R. Keneipp, M. Jung, N. Trainor, C. Chen, J. Zheng, J. M. Redwing, J. Kang, M. Drndić, R. H. Olsson III, and D. Jariwala
    High Current and Carrier Densities in 2D MoS2/AlScN Field-Effect Transistors via Ferroelectric Gating and Ohmic Contacts
    ACS Nano
    19
    8985-8996
    (2025)
    10.1021/acsnano.4c17301
  • M. Hilse, J. Rodriguez, J. Gray, J. Yao, S. Ding, D. S. H. Liu, M. Li, J. Young, Y. Liu, and R. Engel-Herbert
    Mixed polytype/polymorph formation in InSe films grown by molecular beam epitaxy on GaAs(111)B
    npj 2D Materials and Applications
    9
    (2025)
    10.1038/s41699-025-00535-7
  • L. Bobzien, J. Allerbeck, N. Krane, A. Ortega-Guerrero, Z. Wang, D. E. C. Figueroa, C. Dong, C. A. Pignedoli, J. A. Robinson, and B. Schuler
    Layer-Dependent Charge-State Lifetime of Single Se Vacancies in WSe2
    Physical Review Letters
    134
    (2025)
    10.1103/physrevlett.134.076201
  • A. Dernov, M. Kowalik, A. C. T. van Duin, and T. Dumitrică
    Mapping the structural–mechanical landscape of amorphous carbon with ReaxFF molecular dynamics
    Journal of Applied Physics
    137
    (2025)
    10.1063/5.0246126
  • S. Kageyama, K. Okamoto, S. Yasuoka, K. Ide, K. Hanzawa, Y. Hiranaga, P. Hsieh, S. Hazra, A. Suceava, A. Saha, H. Yokota, K. Shigematsu, M. Azuma, V. Gopalan, H. Uchida, et al.
    Realization of Non‐Equilibrium Wurtzite Structure in Heterovalent Ternary MgSiN2 Film Grown by Reactive Sputtering
    Advanced Electronic Materials
    (2025)
    10.1002/aelm.202400880
  • S. Liu, S. K. Chong, D. Kim, A. Vashist, R. Kumar, S. H. Lee, K. L. Wang, Z. Mao, F. Liu, and V. V. Deshpande
    Nanomechanical Characterization of an Antiferromagnetic Topological Insulator
    Nano Letters
    25
    973-980
    (2025)
    10.1021/acs.nanolett.4c04086
  • C. De, Y. Liu, S. V. G. Ayyagari, B. Zheng, K. P. Kelley, S. Hazra, J. He, S. Pawledzio, S. Mali, S. Guchhait, S. Yoshida, Y. Guan, ..., V. H. Crespi, V. Gopalan, Z. Mao, et al.
    Discovery of a layered multiferroic compound Cu 1− x Mn 1+ y SiTe 3 with strong magnetoelectric coupling
    Science Advances
    11
    (2025)
    10.1126/sciadv.adp9379
  • Y. Zhang, C. Xing, D. Wang, A. Genç, S. H. Lee, C. Chang, Z. Li, L. Zheng, K. H. Lim, H. Zhu, R. B. Smriti, Y. Liu, S. Cheng, M. Hong, Z. Mao, et al.
    Realizing high power factor and thermoelectric performance in band engineered AgSbTe2
    Nature Communications
    16
    (2025)
    10.1038/s41467-024-55280-0
  • J. Lynch, P. Kumar, C. Chen, N. Trainor, S. Kumari, T. Peng, C. Y. Chen, Y. Lu, J. Redwing, and D. Jariwala
    Full 2π phase modulation using exciton-polaritons in a two-dimensional superlattice
    Device
    3
    100639
    (2025)
    10.1016/j.device.2024.100639
  • K. D. Nguyen, G. Berruto, S. H. Lee, Y. Bai, H. Lin, Q. Gao, Z. Mao, and S. Yang
    Spectroscopic evidence of intra-unit-cell charge redistribution in a charge-neutral magnetic topological insulator
    Nanoscale
    17
    10663-10669
    (2025)
    10.1039/d4nr04812a
  • M. Hilse, N. Trainor, A. R. Graves, R. Xiao, M. Stanley, Y. Ou, D. S. H. Liu, R. Engel-Herbert, A. Richardella, S. Law, and J. M. Redwing
    Growth of 2D semiconductors and topological insulators
    Comprehensive Semiconductor Science and Technology
    329-375
    (2025)
    10.1016/b978-0-323-96027-4.00031-0
  • D. Sen, H. Ravichandran, M. Das, P. Venkatram, S. Choo, S. Varshney, Z. Zhang, Y. Sun, J. Shah, S. Subbulakshmi Radhakrishnan, A. Saha, S. Hazra, J. M. Redwing, K. A. Mkhoyan, V. Gopalan, et al.
    Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures
    Nature Communications
    15
    (2024)
    10.1038/s41467-024-54231-z
  • S. Bachu, F. Habis, B. Huet, S. Y. Woo, L. Miao, D. Reifsnyder Hickey, G. Kim, N. Trainor, K. Watanabe, T. Taniguchi, D. Jariwala, J. M. Redwing, Y. Wang, M. Kociak, N. Alem, et al.
    Quantum Confined Luminescence in Two Dimensions
    ACS Photonics
    12
    364-374
    (2024)
    10.1021/acsphotonics.4c01739
  • M. Saifur Rahman, A. D. Agyapong, and S. E. Mohney
    Effect of physical vapor deposition on contacts to 2D MoS2
    Journal of Applied Physics
    136
    (2024)
    10.1063/5.0231261
  • Y. Shao, S. Moon, A.  . Rudenko, J. Wang, J. Herzog-Arbeitman, M. Ozerov, D. Graf, Z. Sun, R. Queiroz, S. H. Lee, Y. Zhu, Z. Mao, M.  . Katsnelson, B. A. Bernevig, D. Smirnov, et al.
    Semi-Dirac Fermions in a Topological Metal
    Physical Review X
    14
    (2024)
    10.1103/physrevx.14.041057
  • H. Ravichandran, T. Knobloch, S. Subbulakshmi Radhakrishnan, C. Wilhelmer, S. P. Stepanoff, B. Stampfer, S. Ghosh, A. Oberoi, D. Waldhoer, C. Chen, J. M. Redwing, D. E. Wolfe, T. Grasser, and S. Das
    A stochastic encoder using point defects in two-dimensional materials
    Nature Communications
    15
    (2024)
    10.1038/s41467-024-54283-1
  • I. A. Moses, and W. F. Reinhart
    Transfer learning for multi-material classification of transition metal dichalcogenides with atomic force microscopy
    Machine Learning: Science and Technology
    5
    045081
    (2024)
    10.1088/2632-2153/ada2da
  • Y. Zhang, N. Nayir, Y. K. Shin, Q. Mao, G. Jeong, C. Chen, J. M. Redwing, and A. C. T. van Duin
    ReaxFF Study of Surface Chemical Reactions between α-Al2O3 Substrates and H2O/H2 Gas-Phase Molecules
    The Journal of Physical Chemistry C
    128
    18767-18781
    (2024)
    10.1021/acs.jpcc.4c04669
  • S. Lee, X. Zhang, P. Abdollahi, M. R. Barone, C. Dong, Y. J. Yoo, M. Song, D. Lee, J. Ryu, J. Choi, J. Lee, J. A. Robinson, D. G. Schlom, H. S. Kum, C. S. Chang, et al.
    Route to Enhancing Remote Epitaxy of Perovskite Complex Oxide Thin Films
    ACS Nano
    18
    31225-31233
    (2024)
    10.1021/acsnano.4c09445
  • V. D. Pham, C. González, Y. J. Dappe, C. Dong, J. A. Robinson, A. Trampert, and R. Engel-Herbert
    Scanning tunneling microscopy of ultrathin indium intercalated between graphene and SiC using confinement heteroepitaxy
    Applied Physics Letters
    125
    (2024)
    10.1063/5.0223972
  • D. Lin, J. Lynch, S. Wang, Z. Hu, R. K. Rai, H. Zhang, C. Chen, S. Kumari, E. A. Stach, A. V. Davydov, J. M. Redwing, and D. Jariwala
    Broadband Light Harvesting from Scalable Two-Dimensional Semiconductor Multi-Heterostructures
    Nano Letters
    24
    13935-13944
    (2024)
    10.1021/acs.nanolett.4c02963
  • L. Min, Y. Zhang, Z. Xie, S. V. G. Ayyagari, L. Miao, Y. Onishi, S. H. Lee, Y. Wang, N. Alem, L. Fu, and Z. Mao
    Colossal room-temperature non-reciprocal Hall effect
    Nature Materials
    23
    1671-1677
    (2024)
    10.1038/s41563-024-02015-7
  • N. Watanabe, S. Souma, K. Nakayama, K. Yamauchi, J. F. Ribeiro, Y. Wang, M. Kitamura, K. Horiba, H. Kumigashira, T. Oguchi, Z. Q. Mao, Y. P. Chen, and T. Sato
    Ferromagnetism triggered by band tripling in ruthenate Sr4Ru3O10
    Physical Review B
    110
    (2024)
    10.1103/physrevb.110.155134
  • G. Acharya, B. Neupane, C. Hsu, X. P. Yang, D. Graf, E. S. Choi, K. Pandey, M. R. U. Nabi, S. K. Chhetri, R. Basnet, S. Rahman, J. Wang, Z. Hu, B. Da, H. O. H. Churchill, et al.
    Insulator‐to‐Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors
    Advanced Materials
    36
    (2024)
    10.1002/adma.202410655
  • S. Ghosh, Y. Zheng, Z. Zhang, Y. Sun, T. F. Schranghamer, N. U. Sakib, A. Oberoi, C. Chen, J. M. Redwing, Y. Yang, and S. Das
    Monolithic and heterogeneous three-dimensional integration of two-dimensional materials with high-density vias
    Nature Electronics
    7
    892-903
    (2024)
    10.1038/s41928-024-01251-8
  • P. Moradifar, T. Wang, N. Nayir, T. Sharifi, K. Wang, P. Ajayan, A. C. T. van Duin, and N. Alem
    Thermally induced structural evolution and nanoscale interfacial dynamics in Bi-Sb-Te layered nanostructures
    Matter
    7
    3672-3687
    (2024)
    10.1016/j.matt.2024.08.006
  • J. R. Chin, B. G. Gardner, M. B. Frye, D. S. Liu, S. A. Marini, J. Shallenberger, M. T. McDowell, M. Hilse, S. Law, and L. M. Garten
    Determining the oxidation stability of SnSe under atmospheric exposure
    MRS Communications
    14
    1000-1006
    (2024)
    10.1557/s43579-024-00630-8
  • H. Lv, J. Herfort, M. Hanke, C. Chen, J. M. Redwing, A. Trampert, R. Engel-Herbert, M. Ramsteiner, and J. M. J. Lopes
    All-Epitaxial Fe5-xGeTe2/Graphene and Fe5-xGeTe2/WSe2 van der Waals Heterostructures With Above Room Temperature Ferromagnetism
    IEEE Transactions on Magnetics
    60
    1-5
    (2024)
    10.1109/tmag.2024.3426954
  • S. Sarker, Y. Wang, C. Benyacko, Y. Guan, S. Yoshida, H. Yennawar, J. He, Z. Mao, and V. Gopalan
    Wide‐Bandgap RBa3(B3O6)3 (R = Nd, Sm, Tb, Dy, and Er) Single Crystals for Ultraviolet Nonlinear Optics
    Advanced Optical Materials
    12
    (2024)
    10.1002/adom.202401437
  • Q. Zhang, M. Hilse, W. Auker, J. Gray, and S. Law
    Growth Conditions and Interfacial Misfit Array in SnTe (111) Films Grown on InP (111)A Substrates by Molecular Beam Epitaxy
    ACS Applied Materials & Interfaces
    16
    48598-48606
    (2024)
    10.1021/acsami.4c10296
  • H. Kim, M. Liu, L. Frammolino, Y. Li, F. Zhang, W. Lee, C. Dong, Y. Zhao, G. Chen, P. Hsu, C. Chang, J. Robinson, J. Yan, X. Li, A. H. MacDonald, et al.
    Nanoscale Control of Intrinsic Magnetic Topological Insulator MnBi2Te4 Using Molecular Beam Epitaxy: Implications for Defect Control
    ACS Applied Nano Materials
    7
    21149-21159
    (2024)
    10.1021/acsanm.4c04518
  • Y. Shen, K. Zhu, Y. Xiao, D. Waldhör, A. H. Basher, T. Knobloch, S. Pazos, X. Liang, W. Zheng, Y. Yuan, J. B. Roldan, U. Schwingenschlögl, H. Tian, H. Wu, J. M. Redwing, et al.
    Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy
    Nature Electronics
    7
    856-867
    (2024)
    10.1038/s41928-024-01233-w
  • L. Min, J. P. Barber, Y. Wang, S. V. Gayathri Ayyagari, G. E. Niculescu, E. Krysko, G. R. Bejger, L. Miao, S. H. Lee, Q. Zhang, N. Alem, C. M. Rost, and Z. Mao
    High Entropy Protected Sharp Magnetic Transitions in Highly Disordered Spinel Ferrites
    Journal of the American Chemical Society
    146
    24320-24329
    (2024)
    10.1021/jacs.4c04765
  • B. Fazlioglu-Yalcin, M. Wang, N. Nayir, S. Law, and A. C. T. van Duin
    Atomic Level Insight into the Nucleation of SnSe Thin Films Using Graphene Mask in Molecular Beam Epitaxy: ReaxFF Molecular Dynamics Simulations
    The Journal of Physical Chemistry C
    128
    14294-14304
    (2024)
    10.1021/acs.jpcc.4c03096
  • K. D. Nguyen, W. Lee, J. Dang, T. Wu, G. Berruto, C. Yan, C. I. J. Ip, H. Lin, Q. Gao, S. H. Lee, B. Yan, C. Liu, Z. Mao, X. Zhang, and S. Yang
    Distinguishing surface and bulk electromagnetism via their dynamics in an intrinsic magnetic topological insulator
    Science Advances
    10
    (2024)
    10.1126/sciadv.adn5696
  • A. Vera, B. Zheng, W. Yanez, K. Yang, S. Y. Kim, X. Wang, J. C. Kotsakidis, H. El-Sherif, G. Krishnan, R. J. Koch, T. A. Bowen, C. Dong, ..., N. Samarth, V. H. Crespi, J. A. Robinson, et al.
    Large-Area Intercalated Two-Dimensional Pb/Graphene Heterostructure as a Platform for Generating Spin–Orbit Torque
    ACS Nano
    18
    21985-21997
    (2024)
    10.1021/acsnano.4c04075
  • E. Houser, T. V. Mc Knight, J. M. Redwing, and F. C. Peiris
    Modeling the coverage of MoS2 and WS2 thin films using in-situ spectroscopic ellipsometry
    Journal of Crystal Growth
    640
    127741
    (2024)
    10.1016/j.jcrysgro.2024.127741
  • G. Kim, B. Huet, C. E. Stevens, K. Jo, J. Tsai, S. Bachu, M. Leger, S. Song, M. Rahaman, K. Y. Ma, N. R. Glavin, N. Alem, Q. Yan, J. M. Redwing, D. Jariwala, et al.
    Confinement of excited states in two-dimensional, in-plane, quantum heterostructures
    Nature Communications
    15
    (2024)
    10.1038/s41467-024-50653-x
  • K. T. Munson, R. Torsi, S. Mathela, M. A. Feidler, Y. Lin, J. A. Robinson, and J. B. Asbury
    Influence of Substrate-Induced Charge Doping on Defect-Related Excitonic Emission in Monolayer MoS2
    The Journal of Physical Chemistry Letters
    15
    7850-7856
    (2024)
    10.1021/acs.jpclett.4c01578
  • K. T. Munson, R. Torsi, F. Habis, L. Huberich, Y. Lin, Y. Yuan, K. Wang, B. Schuler, Y. Wang, J. B. Asbury, and J. A. Robinson
    Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2
    Advanced Electronic Materials
    11
    (2024)
    10.1002/aelm.202400403
  • J. Li, D. Zhang, Z. Guo, Z. Chen, X. Jiang, J. M. Larson, H. Zhu, T. Zhang, Y. Gu, B. W. Blankenship, M. Chen, Z. Wu, S. Huang, A. M. Minor, ..., J. M. Redwing, et al.
    Light-driven C–H activation mediated by 2D transition metal dichalcogenides
    Nature Communications
    15
    (2024)
    10.1038/s41467-024-49783-z
  • R. Pendurthi, N. U. Sakib, M. U. K. Sadaf, Z. Zhang, Y. Sun, C. Chen, D. Jayachandran, A. Oberoi, S. Ghosh, S. Kumari, S. P. Stepanoff, D. Somvanshi, Y. Yang, J. M. Redwing, D. E. Wolfe, et al.
    Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors
    Nature Nanotechnology
    19
    970-977
    (2024)
    10.1038/s41565-024-01705-2
  • S. Singh, K. Kim, K. Jo, P. Musavigharavi, B. Kim, J. Zheng, N. Trainor, C. Chen, J. M. Redwing, E. A. Stach, R. H. Olsson, and D. Jariwala
    Nonvolatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures
    ACS Nano
    18
    17958-17968
    (2024)
    10.1021/acsnano.4c04684
  • M. Köpf, S. H. Lee, Z. Q. Mao, and C. A. Kuntscher
    Optical study of the charge dynamics evolution in the topological insulators MnBi2Te4 and Mn(Bi0.74Sb0.26)2Te4 under high pressure
    Physical Review B
    109
    (2024)
    10.1103/physrevb.109.245124
  • M. Yu, S. A. Iddawela, J. Wang, M. Hilse, J. L. Thompson, D. Reifsnyder Hickey, S. B. Sinnott, and S. Law
    Quasi-Van der Waals Epitaxial Growth of γ′-GaSe Nanometer-Thick Films on GaAs(111)B Substrates
    ACS Nano
    18
    17185-17196
    (2024)
    10.1021/acsnano.4c04194
  • Y. -. Li, S. -. Chen, M. García-Díez, M.  . Iraola, H. Pfau, Y. -. Zhu, Z. -. Mao, T. Chen, M. Yi, P. -. Dai, J.  . Sobota, M. Hashimoto, M.  . Vergniory, D. -. Lu, and Z. -. Shen
    Orbital Ingredients and Persistent Dirac Surface State for the Topological Band Structure in FeTe0.55Se0.45
    Physical Review X
    14
    (2024)
    10.1103/physrevx.14.021043
  • I. A. Moses, C. Wu, and W. F. Reinhart
    Crystal growth characterization of WSe2 thin film using machine learning
    Materials Today Advances
    22
    100483
    (2024)
    10.1016/j.mtadv.2024.100483
  • V. D. Pham, C. González, Y. J. Dappe, C. Dong, J. A. Robinson, A. Trampert, and R. Engel-Herbert
    Atomic-scale characterization of defects in oxygen plasma-treated graphene by scanning tunneling microscopy
    Carbon
    227
    119260
    (2024)
    10.1016/j.carbon.2024.119260
  • M. G. Boebinger, D. E. Yilmaz, A. Ghosh, S. Misra, T. S. Mathis, S. V. Kalinin, S. Jesse, Y. Gogotsi, A. C. T. van Duin, and R. R. Unocic
    Direct Fabrication of Atomically Defined Pores in MXenes Using Feedback‐Driven STEM
    Small Methods
    8
    (2024)
    10.1002/smtd.202400203
  • C. Y. Chen, Z. Sun, R. Torsi, K. Wang, J. Kachian, B. Liu, G. B. Rayner, Z. Chen, J. Appenzeller, Y. Lin, and J. A. Robinson
    Tailoring amorphous boron nitride for high-performance two-dimensional electronics
    Nature Communications
    15
    (2024)
    10.1038/s41467-024-48429-4
  • F. B. Sousa, B. Zheng, M. Liu, G. C. Resende, D. Zhou, M. A. Pimenta, M. Terrones, V. H. Crespi, and L. M. Malard
    Effects of Vanadium Doping on the Optical Response and Electronic Structure of WS2 Monolayers
    Advanced Optical Materials
    12
    (2024)
    10.1002/adom.202400235
  • L. Bobzien, J. Allerbeck, S. E. Ammerman, R. Torsi, J. A. Robinson, and B. Schuler
    Ultrafast state-selective tunneling in two-dimensional semiconductors with a phase- and amplitude-controlled THz-scanning tunneling microscope
    APL Materials
    12
    (2024)
    10.1063/5.0200845
  • Z. Fu, P. I. Samarawickrama, J. Ackerman, Y. Zhu, Z. Mao, K. Watanabe, T. Taniguchi, W. Wang, Y. Dahnovsky, M. Wu, T. Chien, J. Tang, A. H. MacDonald, H. Chen, and J. Tian
    Tunneling current-controlled spin states in few-layer van der Waals magnets
    Nature Communications
    15
    (2024)
    10.1038/s41467-024-47820-5
  • A. Laha, S. Yoshida, F. Marques dos Santos Vieira, H. Yi, S. H. Lee, S. V. G. Ayyagari, Y. Guan, L. Min, J. Gonzalez Jimenez, L. Miao, D. Graf, S. Sarker, N. Alem, V. Gopalan, Z. Mao, et al.
    High-entropy engineering of the crystal and electronic structures in a Dirac material
    Nature Communications
    15
    (2024)
    10.1038/s41467-024-47781-9
  • K. E. Plass, J. K. Krebs, J. L. Morford, R. E. Schaak, J. J. Stapleton, and A. C. T. van Duin
    Nanomaterials Research at a Primarily Undergraduate Institution: Transforming Nanorods, Undergraduate Research Communities, and Infrastructure
    ACS Nanoscience Au
    4
    223-234
    (2024)
    10.1021/acsnanoscienceau.4c00005
  • S. Küspert, I. E. Campbell, Z. Zeng, S. E. Balaghi, N. Ortlieb, R. Thomann, M. Knäbbeler‐Buß, C. S. Allen, S. E. Mohney, and A. Fischer
    Ultrasmall and Highly Dispersed Pt Entities Deposited on Mesoporous N‐doped Carbon Nanospheres by Pulsed CVD for Improved HER
    Small
    20
    (2024)
    10.1002/smll.202311260
  • S. K. Chong, Y. Cheng, H. Man, S. H. Lee, Y. Wang, B. Dai, M. Tanabe, T. Yang, Z. Mao, K. A. Moler, and K. L. Wang
    Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi2Te4
    Nature Communications
    15
    (2024)
    10.1038/s41467-024-46689-8
  • S. K. Chong, C. Lei, Y. Cheng, S. H. Lee, Z. Mao, A. H. MacDonald, and K. L. Wang
    Exchange-Driven Chern States in High-Mobility Intrinsic Magnetic Topological Insulators
    Physical Review Letters
    132
    (2024)
    10.1103/physrevlett.132.146601
  • F. Xiang, L. Huberich, P. A. Vargas, R. Torsi, J. Allerbeck, A. M. Z. Tan, C. Dong, P. Ruffieux, R. Fasel, O. Gröning, Y. Lin, R. G. Hennig, J. A. Robinson, and B. Schuler
    Charge state-dependent symmetry breaking of atomic defects in transition metal dichalcogenides
    Nature Communications
    15
    (2024)
    10.1038/s41467-024-47039-4
  • M. Yu, J. Wang, S. A. Iddawela, M. McDonough, J. L. Thompson, S. B. Sinnott, D. Reifsnyder Hickey, and S. Law
    Treatment and aging studies of GaAs(111)B substrates for van der Waals chalcogenide film growth
    Journal of Vacuum Science & Technology B
    42
    (2024)
    10.1116/6.0003470
  • G. Jeong, A. C. T. van Duin, and Y. Xuan
    Exploring Gas-Phase Chemical Reactions in NH3/B2H6 Systems for Chemical Vapor Deposition Using Reactive Molecular Dynamics
    The Journal of Physical Chemistry A
    128
    2584-2593
    (2024)
    10.1021/acs.jpca.3c08051
  • W. Yánez-Parreño, Y. Huang, S. Ghosh, S. Islam, J. E. Gómez, E. Steinebronn, A. Richardella, L. Avilés-Félix, A. Butera, K. A. Mkhoyan, and N. Samarth
    Thin film growth of the Weyl semimetal NbAs
    Physical Review Materials
    8
    (2024)
    10.1103/physrevmaterials.8.034204
  • M. Stanley, Y. Li, J. C. Palmstrom, J. L. Thompson, K. D. Halanayake, D. Reifsnyder Hickey, R. D. McDonald, S. A. Crooker, N. Trivedi, and N. Samarth
    Temperature dependence and limiting mechanisms of the upper critical field of FeSe thin films
    Physical Review B
    109
    (2024)
    10.1103/physrevb.109.094514
  • P. S. Kollipara, Z. Wu, K. Yao, D. Lin, Z. Ju, X. Zhang, T. Jiang, H. Ding, J. Fang, J. Li, B. A. Korgel, J. M. Redwing, G. Yu, and Y. Zheng
    Three-Dimensional Optothermal Manipulation of Light-Absorbing Particles in Phase-Change Gel Media
    ACS Nano
    18
    8062-8072
    (2024)
    10.1021/acsnano.3c11162
  • I. A. Moses, and W. F. Reinhart
    Quantitative analysis of MoS2 thin film micrographs with machine learning
    Materials Characterization
    209
    113701
    (2024)
    10.1016/j.matchar.2024.113701
  • M. Yu, M. Hilse, Q. Zhang, Y. Liu, Z. Wang, and S. Law
    Review of Nanolayered Post-transition Metal Monochalcogenides: Synthesis, Properties, and Applications
    ACS Applied Nano Materials
    7
    28008-28026
    (2024)
    10.1021/acsanm.3c05984
  • H. Yi, Y. Zhao, Y. Chan, J. Cai, R. Mei, X. Wu, Z. Yan, L. Zhou, R. Zhang, Z. Wang, S. Paolini, R. Xiao, K. Wang, A. R. Richardella, ..., N. Samarth, et al.
    Interface-induced superconductivity in magnetic topological insulators
    Science
    383
    634-639
    (2024)
    10.1126/science.adk1270
  • A. D. Agyapong, and S. E. Mohney
    Single-Crystal Intermetallic Catalysts Using MoS2 as a Growth Template
    Crystal Growth & Design
    24
    1578-1590
    (2024)
    10.1021/acs.cgd.3c01167
  • C. Chen, N. Trainor, S. Kumari, H. Myja, T. Kümmell, Z. Zhang, Y. Zhang, A. Bisht, M. U. K. Sadaf, N. U. Sakib, Y. Han, T. V. Mc Knight, A. R. Graves, ..., N. Alem, J. M. Redwing, et al.
    Effect of growth temperature on the microstructure and properties of epitaxial MoS2 monolayers grown by metalorganic chemical vapor deposition
    Journal of Vacuum Science & Technology A
    42
    (2024)
    10.1116/6.0003296
  • Y. Huang, S. Islam, Y. Ou, S. Ghosh, A. Richardella, K. A. Mkhoyan, and N. Samarth
    Epitaxial growth and characterization of Bi1−xSbx thin films on (0001) sapphire substrates
    APL Materials
    12
    (2024)
    10.1063/5.0190217
  • M. Hilse, F. Brown, J. Roth, S. Munyan, and R. Engel-Herbert
    Phase and stoichiometry control in superconducting FeSe layers on SrTiO3
    Journal of Materials Science
    59
    2035-2047
    (2024)
    10.1007/s10853-024-09344-7
  • C. Dong, L. Lu, Y. Lin, and J. A. Robinson
    Air-Stable, Large-Area 2D Metals and Semiconductors
    ACS Nanoscience Au
    4
    115-127
    (2024)
    10.1021/acsnanoscienceau.3c00047
  • K. Kim, S. Song, B. Kim, P. Musavigharavi, N. Trainor, K. Katti, C. Chen, S. Kumari, J. Zheng, J. M. Redwing, E. A. Stach, R. H. Olsson III, and D. Jariwala
    Tuning Polarity in WSe2/AlScN FeFETs via Contact Engineering
    ACS Nano
    18
    4180-4188
    (2024)
    10.1021/acsnano.3c09279
  • K. Momeni, N. Sakib, D. E. C. Figueroa, S. Paul, C. Y. Chen, Y. Lin, and J. A. Robinson
    Combined Experimental and Computational Insight into the Role of Substrate in the Synthesis of Two-Dimensional WSe2
    ACS Applied Materials & Interfaces
    16
    6644-6652
    (2024)
    10.1021/acsami.3c16761
  • Y. Li, F. Zhang, V. Ha, Y. Lin, C. Dong, Q. Gao, Z. Liu, X. Liu, S. H. Ryu, H. Kim, C. Jozwiak, A. Bostwick, K. Watanabe, X. Li, J. A. Robinson, et al.
    Tuning commensurability in twisted van der Waals bilayers
    Nature
    625
    494-499
    (2024)
    10.1038/s41586-023-06904-w
  • D. Jayachandran, R. Pendurthi, M. U. K. Sadaf, N. U. Sakib, A. Pannone, C. Chen, Y. Han, N. Trainor, S. Kumari, T. V. Mc Knight, J. M. Redwing, Y. Yang, and S. Das
    Three-dimensional integration of two-dimensional field-effect transistors
    Nature
    625
    276-281
    (2024)
    10.1038/s41586-023-06860-5
  • M. Boora, Y. Lin, C. Chen, N. Trainor, J. A. Robinson, J. M. Redwing, and J. Y. Suh
    Low-Frequency Raman Study of Large-Area Twisted Bilayers of WS2 Stacked by an Etchant-Free Transfer Method
    ACS Applied Materials & Interfaces
    16
    2902-2911
    (2024)
    10.1021/acsami.3c14708
  • T. V. Mc Knight, T. H. Choudhury, K. Wang, A. Bansal, and J. M. Redwing
    MOCVD Growth of Tungsten Ditelluride Thin Films
    Journal of Crystal Growth
    625
    127436
    (2024)
    10.1016/j.jcrysgro.2023.127436
  • M. Curtis, O. Maryon, N. McKibben, J. Eixenberger, C. Chen, K. Chinnathambi, S. Pasko, S. El Kazzi, J. M. Redwing, and D. Estrada
    Assessment of wafer scale MoS2 atomic layers grown by metal–organic chemical vapor deposition using organo-metal, organo-sulfide, and H2S precursors
    RSC Advances
    14
    22618-22626
    (2024)
    10.1039/d4ra04279d
  • B. Fazlioglu-Yalcin, M. Hilse, and R. Engel-Herbert
    Thermogravimetric study of metal–organic precursors and their suitability for hybrid molecular beam epitaxy
    Journal of Materials Research
    39
    436-448
    (2023)
    10.1557/s43578-023-01237-w
  • S. Stolz, B. Hou, D. Wang, A. Kozhakhmetov, C. Dong, O. Gröning, J. A. Robinson, D. Y. Qiu, and B. Schuler
    Spin-Stabilization by Coulomb Blockade in a Vanadium Dimer in WSe2
    ACS Nano
    17
    23422-23429
    (2023)
    10.1021/acsnano.3c04841
  • Y. Liu, A. N. Morozovska, A. Ghosh, K. P. Kelley, E. A. Eliseev, J. Yao, Y. Liu, and S. Kalinin
    Stress and Curvature Effects in Layered 2D Ferroelectric CuInP2S6
    ACS Nano
    17
    22004-22014
    (2023)
    10.1021/acsnano.3c08603
  • F. Niefind, Q. Mao, N. Nayir, M. Kowalik, J. Ahn, A. J. Winchester, C. Dong, R. A. Maniyara, J. A. Robinson, A. C. T. van Duin, and S. Pookpanratana
    Watching (De)Intercalation of 2D Metals in Epitaxial Graphene: Insight into the Role of Defects
    Small
    20
    (2023)
    10.1002/smll.202306554
  • A. Oberoi, Y. Han, S. P. Stepanoff, A. Pannone, Y. Sun, Y. Lin, C. Chen, J. R. Shallenberger, D. Zhou, M. Terrones, J. M. Redwing, J. A. Robinson, D. E. Wolfe, Y. Yang, and S. Das
    Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping
    ACS Nano
    17
    19709-19723
    (2023)
    10.1021/acsnano.3c03060
  • J. Yao, Y. Liu, S. Ding, Y. Zhu, Z. Mao, S. V. Kalinin, and Y. Liu
    Ferroelectric Schottky diodes of CuInP2S6 nanosheet
    Applied Physics Letters
    123
    (2023)
    10.1063/5.0160928
  • J. Liang, K. Ma, X. Zhao, G. Lu, J. Riffle, C. M. Andrei, C. Dong, T. Furkan, S. Rajabpour, R. R. Prabhakar, J. A. Robinson, V. Magdaleno, Q. T. Trinh, J. W. Ager, M. Salmeron, et al.
    Elucidating the Mechanism of Large Phosphate Molecule Intercalation Through Graphene-Substrate Heterointerfaces
    ACS Applied Materials & Interfaces
    15
    47649-47660
    (2023)
    10.1021/acsami.3c07763
  • T. F. Schranghamer, S. P. Stepanoff, N. Trainor, J. M. Redwing, D. E. Wolfe, and S. Das
    Ultra-scaled phototransistors based on monolayer MoS2
    Device
    1
    100102
    (2023)
    10.1016/j.device.2023.100102
  • H. Wang, Y. Xiong, H. Padma, Y. Wang, Z. Wang, R. Claes, G. Brunin, L. Min, R. Zu, M. T. Wetherington, Y. Wang, Z. Mao, G. Hautier, L. Chen, V. Gopalan, et al.
    Strong electron-phonon coupling driven pseudogap modulation and density-wave fluctuations in a correlated polar metal
    Nature Communications
    14
    (2023)
    10.1038/s41467-023-41460-x
  • S. Shendokar, F. Aryeetey, M. F. Hossen, T. Ignatova, and S. Aravamudhan
    Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide
    Micromachines
    14
    1758
    (2023)
    10.3390/mi14091758
  • H. Ravichandran, D. Sen, A. Wali, T. F. Schranghamer, N. Trainor, J. M. Redwing, B. Ray, and S. Das
    A Peripheral-Free True Random Number Generator Based on Integrated Circuits Enabled by Atomically Thin Two-Dimensional Materials
    ACS Nano
    17
    16817-16826
    (2023)
    10.1021/acsnano.3c03581
  • D. S. H. Liu, M. Hilse, A. R. Lupini, J. M. Redwing, and R. Engel-Herbert
    Growth of Nanometer-Thick γ-InSe on Si(111) 7 × 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
    ACS Applied Nano Materials
    6
    15029-15037
    (2023)
    10.1021/acsanm.3c02602
  • S. Bachu, M. Kowalik, B. Huet, N. Nayir, S. Dwivedi, D. R. Hickey, C. Qian, D. W. Snyder, S. V. Rotkin, J. M. Redwing, A. C. T. van Duin, and N. Alem
    Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers
    ACS Nano
    17
    12140-12150
    (2023)
    10.1021/acsnano.2c12621
  • N. Nayir, Q. Mao, T. Wang, M. Kowalik, Y. Zhang, M. Wang, S. Dwivedi, G. Jeong, Y. K. Shin, and A. van Duin
    Modeling and simulations for 2D materials: a ReaxFF perspective
    2D Materials
    10
    032002
    (2023)
    10.1088/2053-1583/acd7fd
  • T. F. Schranghamer, A. Pannone, H. Ravichandran, S. P. Stepanoff, N. Trainor, J. M. Redwing, D. E. Wolfe, and S. Das
    Radiation Resilient Two-Dimensional Electronics
    ACS Applied Materials & Interfaces
    15
    26946-26959
    (2023)
    10.1021/acsami.3c02406
  • K. Kim, S. Oh, M. M. A. Fiagbenu, J. Zheng, P. Musavigharavi, P. Kumar, N. Trainor, A. Aljarb, Y. Wan, H. M. Kim, K. Katti, S. Song, ..., J. M. Redwing, E. A. Stach, D. Jariwala, et al.
    Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors
    Nature Nanotechnology
    18
    1044-1050
    (2023)
    10.1038/s41565-023-01399-y
  • T. F. Schranghamer, N. U. Sakib, M. U. K. Sadaf, S. Subbulakshmi Radhakrishnan, R. Pendurthi, A. D. Agyapong, S. P. Stepanoff, R. Torsi, C. Chen, J. M. Redwing, J. A. Robinson, D. E. Wolfe, S. E. Mohney, and S. Das
    Ultrascaled Contacts to Monolayer MoS2 Field Effect Transistors
    Nano Letters
    23
    3426-3434
    (2023)
    10.1021/acs.nanolett.3c00466
  • K. Burns, A. M. Z. Tan, J. A. Hachtel, A. Aditya, N. Baradwaj, A. Mishra, T. Linker, A. Nakano, R. Kalia, E. J. Lang, R. Schoell, R. G. Hennig, K. Hattar, and A. Aitkaliyeva
    Tailoring the Angular Mismatch in MoS2 Homobilayers through Deformation Fields
    Small
    19
    (2023)
    10.1002/smll.202300098
  • W. Lee, S. Fernandez-Mulligan, H. Tan, C. Yan, Y. Guan, S. H. Lee, R. Mei, C. Liu, B. Yan, Z. Mao, and S. Yang
    Layer-by-layer disentanglement of Bloch states
    Nature Physics
    19
    950-955
    (2023)
    10.1038/s41567-023-02008-4
  • Y. Li, K. Reidy, A. Penn, S. H. Lee, B. Wang, K. Ye, Z. Mao, F. M. Ross, and R. Jaramillo
    Stabilizing far-from-equilibrium (Mo,Ti)S2 thin films by metal sulfurization at reduced temperature
    Journal of Vacuum Science & Technology A
    41
    (2023)
    10.1116/6.0002227
  • V. D. Pham, C. Dong, and J. A. Robinson
    Atomic structures and interfacial engineering of ultrathin indium intercalated between graphene and a SiC substrate
    Nanoscale Advances
    5
    5601-5612
    (2023)
    10.1039/d3na00630a
  • A. Wali, H. Ravichandran, and S. Das
    Hardware Trojans based on two-dimensional memtransistors
    Nanoscale Horizons
    8
    603-615
    (2023)
    10.1039/d2nh00568a
  • J. R. Chin, M. B. Frye, D. S. Liu, M. Hilse, I. C. Graham, J. Shallenberger, K. Wang, R. Engel-Herbert, M. Wang, Y. K. Shin, N. Nayir, A. C. T. van Duin, and L. M. Garten
    Self-limiting stoichiometry in SnSe thin films
    Nanoscale
    15
    9973-9984
    (2023)
    10.1039/d3nr00645j
  • R. Almaraz, T. Sayer, J. Toole, R. Austin, Y. Farah, N. Trainor, J. M. Redwing, A. Krummel, A. Montoya-Castillo, and J. Sambur
    Quantifying interfacial energetics of 2D semiconductor electrodes using in situ spectroelectrochemistry and many-body theory
    Energy & Environmental Science
    16
    4522-4529
    (2023)
    10.1039/d3ee01165h
  • H. Ravichandran, Y. Zheng, T. F. Schranghamer, N. Trainor, J. M. Redwing, and S. Das
    A Monolithic Stochastic Computing Architecture for Energy Efficient Arithmetic
    Advanced Materials
    35
    (2022)
    10.1002/adma.202206168
  • A. Dodda, D. Jayachandran, A. Pannone, N. Trainor, S. P. Stepanoff, M. A. Steves, S. S. Radhakrishnan, S. Bachu, C. W. Ordonez, J. R. Shallenberger, J. M. Redwing, K. L. Knappenberger, D. E. Wolfe, and S. Das
    Active pixel sensor matrix based on monolayer MoS2 phototransistor array
    Nature Materials
    21
    1379-1387
    (2022)
    10.1038/s41563-022-01398-9
  • S. Subbulakshmi Radhakrishnan, A. Dodda, and S. Das
    An All-in-One Bioinspired Neural Network
    ACS Nano
    16
    20100-20115
    (2022)
    10.1021/acsnano.2c02172
  • H. Padmanabhan, V. A. Stoica, P. K. Kim, M. Poore, T. Yang, X. Shen, A. H. Reid, M. Lin, S. Park, J. Yang, H. (. Wang, N. Z. Koocher, D. Puggioni, A. B. Georgescu, Z. Mao, et al.
    Large Exchange Coupling Between Localized Spins and Topological Bands in MnBi2Te4
    Advanced Materials
    34
    (2022)
    10.1002/adma.202202841
  • A. Dodda, D. Jayachandran, S. Subbulakshmi Radhakrishnan, A. Pannone, Y. Zhang, N. Trainor, J. M. Redwing, and S. Das
    Bioinspired and Low-Power 2D Machine Vision with Adaptive Machine Learning and Forgetting
    ACS Nano
    16
    20010-20020
    (2022)
    10.1021/acsnano.2c02906
  • A. Sebastian, R. Pendurthi, A. Kozhakhmetov, N. Trainor, J. A. Robinson, J. M. Redwing, and S. Das
    Two-dimensional materials-based probabilistic synapses and reconfigurable neurons for measuring inference uncertainty using Bayesian neural networks
    Nature Communications
    13
    (2022)
    10.1038/s41467-022-33699-7
  • Y. Zheng, H. Ravichandran, T. F. Schranghamer, N. Trainor, J. M. Redwing, and S. Das
    Hardware implementation of Bayesian network based on two-dimensional memtransistors
    Nature Communications
    13
    (2022)
    10.1038/s41467-022-33053-x
  • I. E. Campbell, N. Nayir, A. C. T. van Duin, and S. E. Mohney
    Effect of Nitrogen Doping and Oxidation of Graphene on the Deposition of Platinum from Trimethyl(methylcyclopentadienyl)platinum(IV)
    The Journal of Physical Chemistry C
    126
    16357-16368
    (2022)
    10.1021/acs.jpcc.2c04117
  • R. Pendurthi, D. Jayachandran, A. Kozhakhmetov, N. Trainor, J. A. Robinson, J. M. Redwing, and S. Das
    Heterogeneous Integration of Atomically Thin Semiconductors for Non‐von Neumann CMOS
    Small
    18
    (2022)
    10.1002/smll.202202590
  • A. Dodda, N. Trainor, J. M. Redwing, and S. Das
    All-in-one, bio-inspired, and low-power crypto engines for near-sensor security based on two-dimensional memtransistors
    Nature Communications
    13
    (2022)
    10.1038/s41467-022-31148-z
  • Q. Qian, W. Wu, L. Peng, Y. Wang, A. M. Z. Tan, L. Liang, S. M. Hus, K. Wang, T. H. Choudhury, J. M. Redwing, A. A. Puretzky, D. B. Geohegan, R. G. Hennig, X. Ma, and S. Huang
    Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide
    ACS Nano
    16
    7428-7437
    (2022)
    10.1021/acsnano.1c09809
  • H. Padmanabhan, M. Poore, P. K. Kim, N. Z. Koocher, V. A. Stoica, D. Puggioni, H. (Hugo) Wang, X. Shen, A. H. Reid, M. Gu, M. Wetherington, S. H. Lee, R. D. Schaller, Z. Mao, A. M. Lindenberg, et al.
    Interlayer magnetophononic coupling in MnBi2Te4
    Nature Communications
    13
    (2022)
    10.1038/s41467-022-29545-5
  • L. J. Riddiford, A. J. Grutter, T. Pillsbury, M. Stanley, D. Reifsnyder Hickey, P. Li, N. Alem, N. Samarth, and Y. Suzuki
    Understanding Signatures of Emergent Magnetism in Topological Insulator/Ferrite Bilayers
    Physical Review Letters
    128
    (2022)
    10.1103/physrevlett.128.126802
  • M. H. Alam, S. Chowdhury, A. Roy, X. Wu, R. Ge, M. A. Rodder, J. Chen, Y. Lu, C. Stern, L. Houben, R. Chrostowski, S. R. Burlison, S. J. Yang, M. I. Serna, A. Dodabalapur, et al.
    Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide
    ACS Nano
    16
    3756-3767
    (2022)
    10.1021/acsnano.1c07705
  • A. Dodda, and S. Das
    Demonstration of Stochastic Resonance, Population Coding, and Population Voting Using Artificial MoS2 Based Synapses
    ACS Nano
    15
    16172-16182
    (2021)
    10.1021/acsnano.1c05042
  • R. Xiao, D. Xiao, J. Jiang, J. Shin, F. Wang, Y. Zhao, R. Zhang, A. Richardella, K. Wang, M. Kayyalha, M. H. W. Chan, C. Liu, C. Chang, and N. Samarth
    Mapping the phase diagram of the quantum anomalous Hall and topological Hall effects in a dual-gated magnetic topological insulator heterostructure
    Physical Review Research
    3
    (2021)
    10.1103/physrevresearch.3.l032004
  • Y. Li, Z. Wang, R. Xiao, Q. Li, K. Wang, A. Richardella, J. Wang, and N. Samarth
    Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface
    Physical Review Materials
    5
    (2021)
    10.1103/physrevmaterials.5.034802
  • A. Sebastian, R. Pendurthi, T. H. Choudhury, J. M. Redwing, and S. Das
    Benchmarking monolayer MoS2 and WS2 field-effect transistors
    Nature Communications
    12
    (2021)
    10.1038/s41467-020-20732-w
  • A. Dodda, A. Oberoi, A. Sebastian, T. H. Choudhury, J. M. Redwing, and S. Das
    Stochastic resonance in MoS2 photodetector
    Nature Communications
    11
    (2020)
    10.1038/s41467-020-18195-0
  • D. Jayachandran, A. Oberoi, A. Sebastian, T. H. Choudhury, B. Shankar, J. M. Redwing, and S. Das
    A low-power biomimetic collision detector based on an in-memory molybdenum disulfide photodetector
    Nature Electronics
    3
    646-655
    (2020)
    10.1038/s41928-020-00466-9
  • A. D. Agyapong, K. A. Cooley, and S. E. Mohney
    Reactivity of contact metals on monolayer WS2
    Journal of Applied Physics
    128
    (2020)
    10.1063/5.0014005
  • J. R. Rodriguez, W. Murray, K. Fujisawa, S. H. Lee, A. L. Kotrick, Y. Chen, N. Mckee, S. Lee, M. Terrones, S. Trolier-McKinstry, T. N. Jackson, Z. Mao, Z. Liu, and Y. Liu
    Electric field induced metallic behavior in thin crystals of ferroelectric α -In2Se3
    Applied Physics Letters
    117
    (2020)
    10.1063/5.0014945
  • Q. Qian, L. Peng, N. Perea-Lopez, K. Fujisawa, K. Zhang, X. Zhang, T. H. Choudhury, J. M. Redwing, M. Terrones, X. Ma, and S. Huang
    Defect creation in WSe2 with a microsecond photoluminescence lifetime by focused ion beam irradiation
    Nanoscale
    12
    2047-2056
    (2020)
    10.1039/c9nr08390a
  • Y. Lu, and S. B. Sinnott
    Density Functional Theory Study of Epitaxially Strained Monolayer Transition Metal Chalcogenides for Piezoelectricity Generation
    ACS Applied Nano Materials
    3
    384-390
    (2019)
    10.1021/acsanm.9b02021
  • T. N. Walter, S. Lee, X. Zhang, M. Chubarov, J. M. Redwing, T. N. Jackson, and S. E. Mohney
    Atomic layer deposition of ZnO on MoS2 and WSe2
    Applied Surface Science
    480
    43-51
    (2019)
    10.1016/j.apsusc.2019.02.182
  • R. C. Haislmaier, Y. Lu, J. Lapano, H. Zhou, N. Alem, S. B. Sinnott, R. Engel-Herbert, and V. Gopalan
    Large tetragonality and room temperature ferroelectricity in compressively strained CaTiO3 thin films
    APL Materials
    7
    (2019)
    10.1063/1.5090798
  • L. Ding, M. S. Ukhtary, M. Chubarov, T. H. Choudhury, F. Zhang, R. Yang, A. Zhang, J. A. Fan, M. Terrones, J. M. Redwing, T. Yang, M. Li, R. Saito, and S. Huang
    Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy
    IEEE Transactions on Electron Devices
    65
    4059-4067
    (2018)
    10.1109/ted.2018.2847230
  • J. R. Shallenberger
    2D tungsten diselenide analyzed by XPS
    Surface Science Spectra
    25
    (2018)
    10.1116/1.5016189
View All Publications
People
  • Joan Redwing
    Distinguished Professor, Director, Synthesis Lead
    %{"id" => nil, "name" => "The Pennsylvania State University"}
  • Nitin Samarth
    Professor, Department Head, Associate Director 2DCC-MIP, Characterization Lead
  • Joshua Robinson
    Professor, Director of User Programs
    %{"id" => nil, "name" => "Pennsylvania State University"}
  • Kevin Dressler
    Operations & User Facilities Director
  • Vincent Crespi
    Distinguished Professor, Theory Lead
    %{"id" => nil, "name" => "The Pennsylvania State University"}
  • Stephanie Law
    Director of Education, Outreach and Diversity Programs
View All People
Universities