2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP)

The 2DCC-MIP combines a vibrant in-house research effort focused on transformative advances in the synthesis and characterization of 2D chalcogenide layered materials with a robust external user program that provides access to expertise and state-of-the-art facilities. The 2DCC-MIP platform enables cutting edge research and discovery, across in-house research and the user program, on the synthesis and characterization of 2D chalcogenide materials by a national user community guided by four science drivers: Physics of 2D Systems, Epitaxy of 2D Chalcogenides, Next-generation 2D Electronics, and Advanced Characterization and Modeling.

Publications

  • L. Xu, Z. Wu, Y. Han, M. Wang, J. Li, C. Chen, L. Wang, Y. Yuan, L. Shi, J. M. Redwing, and X. Zhang
    Pseudosymmetric Epitaxy for Scalable Growth of Uniform Two-Dimensional Ferroelectric α-In2Se3 Monolayer
    Nano Letters
    (2025)
    10.1021/acs.nanolett.5c01935
  • Q. Zhang, Y. Ou, M. Hilse, D. S. H. Liu, and S. Law
    Prospects for THz optoelectronic devices using chalcogenide topological materials and recent progress on their synthesis by molecular beam epitaxy [Invited]
    Optical Materials Express
    15
    1135
    (2025)
    10.1364/ome.562065
  • N. J. Hourigan, P. Seiler, M. Wetherington, C. Dong, J. A. Robinson, G. Benedek, and A. Tamtögl
    How does intercalation affect the structure and dynamics of bilayer graphene?
    Carbon
    238
    120156
    (2025)
    10.1016/j.carbon.2025.120156
  • R. Trice, M. Yu, A. Richardella, M. Hilse, and S. Law
    Substrate preparation methods for improved synthesis of Bi2Se3 films grown on sapphire by molecular beam epitaxy
    Journal of Vacuum Science & Technology A
    43
    (2025)
    10.1116/6.0004429
  • Q. Zhang, M. K. Caucci, M. Hilse, A. Diaz Gomez, S. Sinnott, and S. Law
    Effects of Sb and Bi Doping in SnTe Layers Grown by Molecular Beam Epitaxy
    ACS Applied Electronic Materials
    7
    3543-3551
    (2025)
    10.1021/acsaelm.5c00299
  • Q. Zhang, K. Wang, W. Auker, M. Hilse, and S. Law
    Molecular Beam Epitaxy of Mn2In2Se5 van der Waals Layers Using Mn Intercalation
    Crystal Growth & Design
    25
    2476-2483
    (2025)
    10.1021/acs.cgd.4c01703
  • C. Ordonez, C. Dong, A. Jain, L. Lu, J. A. Robinson, and K. L. Knappenberger
    High Harmonic Generation from 2D Polar Metal Heterostructures
    The Journal of Physical Chemistry C
    129
    5133-5139
    (2025)
    10.1021/acs.jpcc.4c08773
  • L. Bobzien, J. Allerbeck, N. Krane, A. Ortega-Guerrero, Z. Wang, D. E. C. Figueroa, C. Dong, C. A. Pignedoli, J. A. Robinson, and B. Schuler
    Layer-Dependent Charge-State Lifetime of Single Se Vacancies in WSe2
    Physical Review Letters
    134
    (2025)
    10.1103/physrevlett.134.076201
  • A. Dernov, M. Kowalik, A. C. T. van Duin, and T. Dumitrică
    Mapping the structural–mechanical landscape of amorphous carbon with ReaxFF molecular dynamics
    Journal of Applied Physics
    137
    (2025)
    10.1063/5.0246126
  • S. Kageyama, K. Okamoto, S. Yasuoka, K. Ide, K. Hanzawa, Y. Hiranaga, P. Hsieh, S. Hazra, A. Suceava, A. Saha, H. Yokota, K. Shigematsu, M. Azuma, V. Gopalan, H. Uchida, H. Hiramatsu, and H. Funakubo
    Realization of Non‐Equilibrium Wurtzite Structure in Heterovalent Ternary MgSiN2 Film Grown by Reactive Sputtering
    Advanced Electronic Materials
    (2025)
    10.1002/aelm.202400880
  • C. De, Y. Liu, S. V. G. Ayyagari, B. Zheng, K. P. Kelley, S. Hazra, J. He, S. Pawledzio, S. Mali, S. Guchhait, S. Yoshida, Y. Guan, S. H. Lee, M. Sretenovic, X. Ke, L. Wang, M. H. Engelhard, Y. Du, W. Xie, X. Wang, V. H. Crespi, N. Alem, V. Gopalan, Q. Zhang, and Z. Mao
    Discovery of a layered multiferroic compound Cu 1− x Mn 1+ y SiTe 3 with strong magnetoelectric coupling
    Science Advances
    11
    (2025)
    10.1126/sciadv.adp9379
  • Y. Zhang, C. Xing, D. Wang, A. Genç, S. H. Lee, C. Chang, Z. Li, L. Zheng, K. H. Lim, H. Zhu, R. B. Smriti, Y. Liu, S. Cheng, M. Hong, X. Fan, Z. Mao, L. Zhao, A. Cabot, T. Zhu, and B. Poudel
    Realizing high power factor and thermoelectric performance in band engineered AgSbTe2
    Nature Communications
    16
    (2025)
    10.1038/s41467-024-55280-0
  • M. Hilse, N. Trainor, A. R. Graves, R. Xiao, M. Stanley, Y. Ou, D. S. H. Liu, R. Engel-Herbert, A. Richardella, S. Law, and J. M. Redwing
    Growth of 2D semiconductors and topological insulators
    Comprehensive Semiconductor Science and Technology
    329-375
    (2025)
    10.1016/b978-0-323-96027-4.00031-0
  • I. A. Moses, and W. F. Reinhart
    Transfer learning for multi-material classification of transition metal dichalcogenides with atomic force microscopy
    Machine Learning: Science and Technology
    5
    045081
    (2024)
    10.1088/2632-2153/ada2da
  • Y. Zhang, N. Nayir, Y. K. Shin, Q. Mao, G. Jeong, C. Chen, J. M. Redwing, and A. C. T. van Duin
    ReaxFF Study of Surface Chemical Reactions between α-Al2O3 Substrates and H2O/H2 Gas-Phase Molecules
    The Journal of Physical Chemistry C
    128
    18767-18781
    (2024)
    10.1021/acs.jpcc.4c04669
  • V. D. Pham, C. González, Y. J. Dappe, C. Dong, J. A. Robinson, A. Trampert, and R. Engel-Herbert
    Scanning tunneling microscopy of ultrathin indium intercalated between graphene and SiC using confinement heteroepitaxy
    Applied Physics Letters
    125
    (2024)
    10.1063/5.0223972
  • L. Min, Y. Zhang, Z. Xie, S. V. G. Ayyagari, L. Miao, Y. Onishi, S. H. Lee, Y. Wang, N. Alem, L. Fu, and Z. Mao
    Colossal room-temperature non-reciprocal Hall effect
    Nature Materials
    23
    1671-1677
    (2024)
    10.1038/s41563-024-02015-7
  • N. Watanabe, S. Souma, K. Nakayama, K. Yamauchi, J. F. Ribeiro, Y. Wang, M. Kitamura, K. Horiba, H. Kumigashira, T. Oguchi, Z. Q. Mao, Y. P. Chen, and T. Sato
    Ferromagnetism triggered by band tripling in ruthenate Sr4Ru3O10
    Physical Review B
    110
    (2024)
    10.1103/physrevb.110.155134
  • P. Moradifar, T. Wang, N. Nayir, T. Sharifi, K. Wang, P. Ajayan, A. C. T. van Duin, and N. Alem
    Thermally induced structural evolution and nanoscale interfacial dynamics in Bi-Sb-Te layered nanostructures
    Matter
    7
    3672-3687
    (2024)
    10.1016/j.matt.2024.08.006
  • H. Lv, J. Herfort, M. Hanke, C. Chen, J. M. Redwing, A. Trampert, R. Engel-Herbert, M. Ramsteiner, and J. M. J. Lopes
    All-Epitaxial Fe5-xGeTe2/Graphene and Fe5-xGeTe2/WSe2 van der Waals Heterostructures With Above Room Temperature Ferromagnetism
    IEEE Transactions on Magnetics
    60
    1-5
    (2024)
    10.1109/tmag.2024.3426954
  • S. Sarker, Y. Wang, C. Benyacko, Y. Guan, S. Yoshida, H. Yennawar, J. He, Z. Mao, and V. Gopalan
    Wide‐Bandgap RBa3(B3O6)3 (R = Nd, Sm, Tb, Dy, and Er) Single Crystals for Ultraviolet Nonlinear Optics
    Advanced Optical Materials
    12
    (2024)
    10.1002/adom.202401437
  • Q. Zhang, M. Hilse, W. Auker, J. Gray, and S. Law
    Growth Conditions and Interfacial Misfit Array in SnTe (111) Films Grown on InP (111)A Substrates by Molecular Beam Epitaxy
    ACS Applied Materials & Interfaces
    16
    48598-48606
    (2024)
    10.1021/acsami.4c10296
  • L. Min, J. P. Barber, Y. Wang, S. V. Gayathri Ayyagari, G. E. Niculescu, E. Krysko, G. R. Bejger, L. Miao, S. H. Lee, Q. Zhang, N. Alem, C. M. Rost, and Z. Mao
    High Entropy Protected Sharp Magnetic Transitions in Highly Disordered Spinel Ferrites
    Journal of the American Chemical Society
    146
    24320-24329
    (2024)
    10.1021/jacs.4c04765
  • B. Fazlioglu-Yalcin, M. Wang, N. Nayir, S. Law, and A. C. T. van Duin
    Atomic Level Insight into the Nucleation of SnSe Thin Films Using Graphene Mask in Molecular Beam Epitaxy: ReaxFF Molecular Dynamics Simulations
    The Journal of Physical Chemistry C
    128
    14294-14304
    (2024)
    10.1021/acs.jpcc.4c03096
  • A. Vera, B. Zheng, W. Yanez, K. Yang, S. Y. Kim, X. Wang, J. C. Kotsakidis, H. El-Sherif, G. Krishnan, R. J. Koch, T. A. Bowen, C. Dong, Y. Wang, M. Wetherington, E. Rotenberg, N. Bassim, A. L. Friedman, R. M. Wallace, C. Liu, N. Samarth, V. H. Crespi, and J. A. Robinson
    Large-Area Intercalated Two-Dimensional Pb/Graphene Heterostructure as a Platform for Generating Spin–Orbit Torque
    ACS Nano
    18
    21985-21997
    (2024)
    10.1021/acsnano.4c04075
  • K. T. Munson, R. Torsi, S. Mathela, M. A. Feidler, Y. Lin, J. A. Robinson, and J. B. Asbury
    Influence of Substrate-Induced Charge Doping on Defect-Related Excitonic Emission in Monolayer MoS2
    The Journal of Physical Chemistry Letters
    15
    7850-7856
    (2024)
    10.1021/acs.jpclett.4c01578
  • M. Köpf, S. H. Lee, Z. Q. Mao, and C. A. Kuntscher
    Optical study of the charge dynamics evolution in the topological insulators MnBi2Te4 and Mn(Bi0.74Sb0.26)2Te4 under high pressure
    Physical Review B
    109
    (2024)
    10.1103/physrevb.109.245124
  • M. Yu, S. A. Iddawela, J. Wang, M. Hilse, J. L. Thompson, D. Reifsnyder Hickey, S. B. Sinnott, and S. Law
    Quasi-Van der Waals Epitaxial Growth of γ′-GaSe Nanometer-Thick Films on GaAs(111)B Substrates
    ACS Nano
    18
    17185-17196
    (2024)
    10.1021/acsnano.4c04194
  • I. A. Moses, C. Wu, and W. F. Reinhart
    Crystal growth characterization of WSe2 thin film using machine learning
    Materials Today Advances
    22
    100483
    (2024)
    10.1016/j.mtadv.2024.100483
  • V. D. Pham, C. González, Y. J. Dappe, C. Dong, J. A. Robinson, A. Trampert, and R. Engel-Herbert
    Atomic-scale characterization of defects in oxygen plasma-treated graphene by scanning tunneling microscopy
    Carbon
    227
    119260
    (2024)
    10.1016/j.carbon.2024.119260
  • M. G. Boebinger, D. E. Yilmaz, A. Ghosh, S. Misra, T. S. Mathis, S. V. Kalinin, S. Jesse, Y. Gogotsi, A. C. T. van Duin, and R. R. Unocic
    Direct Fabrication of Atomically Defined Pores in MXenes Using Feedback‐Driven STEM
    Small Methods
    8
    (2024)
    10.1002/smtd.202400203
  • C. Y. Chen, Z. Sun, R. Torsi, K. Wang, J. Kachian, B. Liu, G. B. Rayner, Z. Chen, J. Appenzeller, Y. Lin, and J. A. Robinson
    Tailoring amorphous boron nitride for high-performance two-dimensional electronics
    Nature Communications
    15
    (2024)
    10.1038/s41467-024-48429-4
  • F. B. Sousa, B. Zheng, M. Liu, G. C. Resende, D. Zhou, M. A. Pimenta, M. Terrones, V. H. Crespi, and L. M. Malard
    Effects of Vanadium Doping on the Optical Response and Electronic Structure of WS2 Monolayers
    Advanced Optical Materials
    12
    (2024)
    10.1002/adom.202400235
  • L. Bobzien, J. Allerbeck, S. E. Ammerman, R. Torsi, J. A. Robinson, and B. Schuler
    Ultrafast state-selective tunneling in two-dimensional semiconductors with a phase- and amplitude-controlled THz-scanning tunneling microscope
    APL Materials
    12
    (2024)
    10.1063/5.0200845
  • A. Laha, S. Yoshida, F. Marques dos Santos Vieira, H. Yi, S. H. Lee, S. V. G. Ayyagari, Y. Guan, L. Min, J. Gonzalez Jimenez, L. Miao, D. Graf, S. Sarker, W. Xie, N. Alem, V. Gopalan, C. Chang, I. Dabo, and Z. Mao
    High-entropy engineering of the crystal and electronic structures in a Dirac material
    Nature Communications
    15
    (2024)
    10.1038/s41467-024-47781-9
  • F. Xiang, L. Huberich, P. A. Vargas, R. Torsi, J. Allerbeck, A. M. Z. Tan, C. Dong, P. Ruffieux, R. Fasel, O. Gröning, Y. Lin, R. G. Hennig, J. A. Robinson, and B. Schuler
    Charge state-dependent symmetry breaking of atomic defects in transition metal dichalcogenides
    Nature Communications
    15
    (2024)
    10.1038/s41467-024-47039-4
  • M. Yu, J. Wang, S. A. Iddawela, M. McDonough, J. L. Thompson, S. B. Sinnott, D. Reifsnyder Hickey, and S. Law
    Treatment and aging studies of GaAs(111)B substrates for van der Waals chalcogenide film growth
    Journal of Vacuum Science & Technology B
    42
    (2024)
    10.1116/6.0003470
  • G. Jeong, A. C. T. van Duin, and Y. Xuan
    Exploring Gas-Phase Chemical Reactions in NH3/B2H6 Systems for Chemical Vapor Deposition Using Reactive Molecular Dynamics
    The Journal of Physical Chemistry A
    128
    2584-2593
    (2024)
    10.1021/acs.jpca.3c08051
  • W. Yánez-Parreño, Y. Huang, S. Ghosh, S. Islam, J. E. Gómez, E. Steinebronn, A. Richardella, L. Avilés-Félix, A. Butera, K. A. Mkhoyan, and N. Samarth
    Thin film growth of the Weyl semimetal NbAs
    Physical Review Materials
    8
    (2024)
    10.1103/physrevmaterials.8.034204
  • M. Stanley, Y. Li, J. C. Palmstrom, J. L. Thompson, K. D. Halanayake, D. Reifsnyder Hickey, R. D. McDonald, S. A. Crooker, N. Trivedi, and N. Samarth
    Temperature dependence and limiting mechanisms of the upper critical field of FeSe thin films
    Physical Review B
    109
    (2024)
    10.1103/physrevb.109.094514
  • I. A. Moses, and W. F. Reinhart
    Quantitative analysis of MoS2 thin film micrographs with machine learning
    Materials Characterization
    209
    113701
    (2024)
    10.1016/j.matchar.2024.113701
  • M. Yu, M. Hilse, Q. Zhang, Y. Liu, Z. Wang, and S. Law
    Review of Nanolayered Post-transition Metal Monochalcogenides: Synthesis, Properties, and Applications
    ACS Applied Nano Materials
    7
    28008-28026
    (2024)
    10.1021/acsanm.3c05984
  • H. Yi, Y. Zhao, Y. Chan, J. Cai, R. Mei, X. Wu, Z. Yan, L. Zhou, R. Zhang, Z. Wang, S. Paolini, R. Xiao, K. Wang, A. R. Richardella, J. Singleton, L. E. Winter, T. Prokscha, Z. Salman, A. Suter, P. P. Balakrishnan, A. J. Grutter, M. H. W. Chan, N. Samarth, X. Xu, W. Wu, C. Liu, and C. Chang
    Interface-induced superconductivity in magnetic topological insulators
    Science
    383
    634-639
    (2024)
    10.1126/science.adk1270
  • C. Chen, N. Trainor, S. Kumari, H. Myja, T. Kümmell, Z. Zhang, Y. Zhang, A. Bisht, M. U. K. Sadaf, N. U. Sakib, Y. Han, T. V. Mc Knight, A. R. Graves, M. E. Leger, N. D. Redwing, M. Kim, D. A. Kowalczyk, G. Bacher, N. Alem, Y. Yang, S. Das, and J. M. Redwing
    Effect of growth temperature on the microstructure and properties of epitaxial MoS2 monolayers grown by metalorganic chemical vapor deposition
    Journal of Vacuum Science & Technology A
    42
    (2024)
    10.1116/6.0003296
  • Y. Huang, S. Islam, Y. Ou, S. Ghosh, A. Richardella, K. A. Mkhoyan, and N. Samarth
    Epitaxial growth and characterization of Bi1−xSbx thin films on (0001) sapphire substrates
    APL Materials
    12
    (2024)
    10.1063/5.0190217
  • M. Hilse, F. Brown, J. Roth, S. Munyan, and R. Engel-Herbert
    Phase and stoichiometry control in superconducting FeSe layers on SrTiO3
    Journal of Materials Science
    59
    2035-2047
    (2024)
    10.1007/s10853-024-09344-7
  • C. Dong, L. Lu, Y. Lin, and J. A. Robinson
    Air-Stable, Large-Area 2D Metals and Semiconductors
    ACS Nanoscience Au
    4
    115-127
    (2024)
    10.1021/acsnanoscienceau.3c00047
  • T. V. Mc Knight, T. H. Choudhury, K. Wang, A. Bansal, and J. M. Redwing
    MOCVD Growth of Tungsten Ditelluride Thin Films
    Journal of Crystal Growth
    625
    127436
    (2024)
    10.1016/j.jcrysgro.2023.127436
  • B. Fazlioglu-Yalcin, M. Hilse, and R. Engel-Herbert
    Thermogravimetric study of metal–organic precursors and their suitability for hybrid molecular beam epitaxy
    Journal of Materials Research
    39
    436-448
    (2023)
    10.1557/s43578-023-01237-w
  • S. Stolz, B. Hou, D. Wang, A. Kozhakhmetov, C. Dong, O. Gröning, J. A. Robinson, D. Y. Qiu, and B. Schuler
    Spin-Stabilization by Coulomb Blockade in a Vanadium Dimer in WSe2
    ACS Nano
    17
    23422-23429
    (2023)
    10.1021/acsnano.3c04841
  • D. S. H. Liu, M. Hilse, A. R. Lupini, J. M. Redwing, and R. Engel-Herbert
    Growth of Nanometer-Thick γ-InSe on Si(111) 7 × 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
    ACS Applied Nano Materials
    6
    15029-15037
    (2023)
    10.1021/acsanm.3c02602
  • S. Bachu, M. Kowalik, B. Huet, N. Nayir, S. Dwivedi, D. R. Hickey, C. Qian, D. W. Snyder, S. V. Rotkin, J. M. Redwing, A. C. T. van Duin, and N. Alem
    Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers
    ACS Nano
    17
    12140-12150
    (2023)
    10.1021/acsnano.2c12621
  • N. Nayir, Q. Mao, T. Wang, M. Kowalik, Y. Zhang, M. Wang, S. Dwivedi, G. Jeong, Y. K. Shin, and A. van Duin
    Modeling and simulations for 2D materials: a ReaxFF perspective
    2D Materials
    10
    032002
    (2023)
    10.1088/2053-1583/acd7fd
  • K. Burns, A. M. Z. Tan, J. A. Hachtel, A. Aditya, N. Baradwaj, A. Mishra, T. Linker, A. Nakano, R. Kalia, E. J. Lang, R. Schoell, R. G. Hennig, K. Hattar, and A. Aitkaliyeva
    Tailoring the Angular Mismatch in MoS2 Homobilayers through Deformation Fields
    Small
    19
    (2023)
    10.1002/smll.202300098
  • V. D. Pham, C. Dong, and J. A. Robinson
    Atomic structures and interfacial engineering of ultrathin indium intercalated between graphene and a SiC substrate
    Nanoscale Advances
    5
    5601-5612
    (2023)
    10.1039/d3na00630a
  • L. J. Riddiford, A. J. Grutter, T. Pillsbury, M. Stanley, D. Reifsnyder Hickey, P. Li, N. Alem, N. Samarth, and Y. Suzuki
    Understanding Signatures of Emergent Magnetism in Topological Insulator/Ferrite Bilayers
    Physical Review Letters
    128
    (2022)
    10.1103/physrevlett.128.126802
  • M. H. Alam, S. Chowdhury, A. Roy, X. Wu, R. Ge, M. A. Rodder, J. Chen, Y. Lu, C. Stern, L. Houben, R. Chrostowski, S. R. Burlison, S. J. Yang, M. I. Serna, A. Dodabalapur, F. Mangolini, D. Naveh, J. C. Lee, S. K. Banerjee, J. H. Warner, and D. Akinwande
    Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide
    ACS Nano
    16
    3756-3767
    (2022)
    10.1021/acsnano.1c07705
  • R. Xiao, D. Xiao, J. Jiang, J. Shin, F. Wang, Y. Zhao, R. Zhang, A. Richardella, K. Wang, M. Kayyalha, M. H. W. Chan, C. Liu, C. Chang, and N. Samarth
    Mapping the phase diagram of the quantum anomalous Hall and topological Hall effects in a dual-gated magnetic topological insulator heterostructure
    Physical Review Research
    3
    (2021)
    10.1103/physrevresearch.3.l032004
  • Y. Li, Z. Wang, R. Xiao, Q. Li, K. Wang, A. Richardella, J. Wang, and N. Samarth
    Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface
    Physical Review Materials
    5
    (2021)
    10.1103/physrevmaterials.5.034802
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People
  • Joan Redwing
    Distinguished Professor, Director, Synthesis Lead
    Department of Materials Science and Engineering
  • Nitin Samarth
    Professor, Department Head, Associate Director 2DCC-MIP, Characterization Lead
    Department of Physics
  • Joshua A. Robinson
    Professor, Director of User Programs
    Department of Materials Science and Engineering
  • Kevin Dressler
    Operations & User Facilities Director
  • Vincent Crespi
    Distinguished Professor, Theory Lead
    Physics, Chemistry, Materials Science
  • Stephanie Law
    Director of Education, Outreach and Diversity Programs
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