-Atomically-thin metals Ga, In, and Sn are stabilized at the interface of epitaxial graphene and SiC through confinement heteroepitaxy
-Metal atoms generated via thermal evaporation of metal powders migrate through defects in graphene layers and passivate the surface of SiC
-2D Ga layers exhibit BCS-type superconductivity and enhanced Tc of ~4 K (compared to 2 K in bulk, α-Ga)
-The process of stabilizing 2D superconductors via CHet can be applied to elements beyond p-block metals, opening opportunities to study unconventional properties that enable exploration of new physics and devices.
-Metal atoms generated via thermal evaporation of metal powders migrate through defects in graphene layers and passivate the surface of SiC
-2D Ga layers exhibit BCS-type superconductivity and enhanced Tc of ~4 K (compared to 2 K in bulk, α-Ga)
-The process of stabilizing 2D superconductors via CHet can be applied to elements beyond p-block metals, opening opportunities to study unconventional properties that enable exploration of new physics and devices.
2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP)
The 2DCC-MIP combines a vibrant in-house research effort focused on transformative advances in the synthesis and characterization of 2D chalcogenide layered materials with a robust external user program that provides access to expertise and state-of-the-art facilities. The 2DCC-MIP platform enables cutting edge research and discovery, across in-house research and the user program, on the synthesis and characterization of 2D chalcogenide materials by a national user community guided by four science drivers: Physics of 2D Systems, Epitaxy of 2D Chalcogenides, Next-generation 2D Electronics, and Advanced Characterization and Modeling.