Atomically thin two-dimensional layers such as molybdenum disulfide, MoS2, are promising materials for nanoelectronics due to their exceptional electronic and optical properties. An inter-atomic potential has been developed that can accurately describe the thermodynamic and structural properties of MoS2 sheets, including defects and transitions between different structural phases. A new type of “ripple” defect has been identified as a favorable host for sulfur vacancy defects. A train of moving ripplocation defects may be able to “sweep out” sulfur vacancy defects from key regions within 2D devices.
2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP)
The 2DCC-MIP combines a vibrant in-house research effort focused on transformative advances in the synthesis and characterization of 2D chalcogenide layered materials with a robust external user program that provides access to expertise and state-of-the-art facilities. The 2DCC-MIP platform enables cutting edge research and discovery, across in-house research and the user program, on the synthesis and characterization of 2D chalcogenide materials by a national user community guided by four science drivers: Physics of 2D Systems, Epitaxy of 2D Chalcogenides, Next-generation 2D Electronics, and Advanced Characterization and Modeling.