Benchmarking monolayer MoS2 and WS2 field-effect transistors

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Project Summary: To assess the potential of transition metal dichalcogenides (TMDs) for future circuits, it is important to study the variation in key device parameters across a large number of devices. Here we benchmark device-to-device variation in field-effect transistors (FETs) based on wafer-scale monolayer MoS2 and WS2. Our study involves 230 MoS2 FETs and 160 WS2 FETs with channel lengths ranging from 5 µm down to 100 nm. We use statistical measures to evaluate key FET performance indicators for benchmarking these TMD monolayers against existing literature as well as ultra-thin body Si FETs. Our results show consistent performance of the 2D FETs across 1×1 cm2 chips owing to high quality uniform layers and clean transfer onto device substrates. We demonstrate record high carrier mobility of 33 cm2V-1s-1 in WS2 FETs, which is a 1.5X improvement compared to the best literature report. Our results confirm the technological viability of 2D FETs in future integrated circuits. 

2DCC Role: The wafer-scale MoS2 and WS2 monolayer samples used for this study were grown by metalorganic chemical vapor deposition (MOCVD) in the 2DCC facility. The device results provide a benchmark for academic and industry users who are working with similar 2DCC material.

National Science Foundation

Division of Materials Research

2415 Eisenhower Avenue

Alexandria, VA 22314

Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.